GE12090CDA3
1200V 875A SiC Half-bridge modulManufacturer: GE Aerospace
Categories: FET, MOSFET Arrays
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The GE Aerospace GE12090CDA3 is a 1200V, 875A Silicon Carbide (SiC) half-bridge module. This chassis-mount component features a low Rds(on) of 2.19mOhm at 950A and 20V, supporting a maximum power dissipation of 2350W. With a Vds of 1200V and a continuous drain current capability of 875A, it is designed for high-performance applications. The module incorporates two N-channel MOSFETs within a single package, offering a 58.6nF input capacitance. Operating up to 175°C, this SiC technology component is utilized in demanding industrial sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | 175°C |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 2350W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 875A |
| Input Capacitance (Ciss) (Max) @ Vds | 58.6nF @ 600V |
| Rds On (Max) @ Id, Vgs | 2.19mOhm @ 950A, 20V |
| Vgs(th) (Max) @ Id | 4.5V @ 320mA |
| Supplier Device Package | Module |
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