GPIXV30DFN
GANFET N-CH 1200V 30A DFN8X8Manufacturer: GaNPower
Categories: Single FETs, MOSFETs
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GaNPower's GPIXV30DFN is an N-Channel GaNFET designed for high-voltage applications. This surface-mount component features a Drain-to-Source Voltage (Vdss) of 1200 V and a continuous drain current (Id) of 30 A at 25°C. The device exhibits a typical input capacitance (Ciss) of 236 pF at 400 V and a gate charge (Qg) of 8.25 nC at 6 V. Its operating temperature range is -55°C to 150°C. The GPIXV30DFN is suitable for power conversion systems in industries such as electric vehicles, industrial power supplies, and renewable energy infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BagDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bag |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Rds On (Max) @ Id, Vgs | - |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1.4V @ 3.5mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Vgs (Max) | +7.5V, -12V |
| Drain to Source Voltage (Vdss) | 1200 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.25 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 236 pF @ 400 V |
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