GPI65010DF56
GANFET N-CH 650V 10A DFN 5X6Manufacturer: GaNPower
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 10A Surface Mount Die
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | Die |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | GaNFET (Gallium Nitride) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Vgs(th) (Max) @ Id | 1.4V @ 3.5mA |
| Supplier Device Package | Die |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Vgs (Max) | +7.5V, -12V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 2.6 nC @ 6 V |
| Input Capacitance (Ciss) (Max) @ Vds | 90 pF @ 400 V |
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