FF06320A
SICFET N-CH 650V 8.8A TO-252Manufacturer: fastSiC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
N-Channel 650 V 8.6A (Tc) 41W (Tc) Surface Mount TO-252
Additional Information
Series: FalconRoHS Status: RoHS CompliantManufacturer Lead Time: Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 8.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 320mOhm @ 2A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 41W (Tc) |
| Vgs(th) (Max) @ Id | 1.6V @ 4mA |
| Supplier Device Package | TO-252 |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | 18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 317.5 pF @ 400 V |
| Qualification | - |
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