

Manufacturer: fastSiC
Categories: Single FETs, MOSFETs
Quality Control: Learn More
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-PowerTSFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | SiC (Silicon Carbide Junction Transistor) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 10A, 18V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 14mA |
| Supplier Device Package | 4-PDFN (8x8) |
| Grade | - |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Vgs (Max) | 18V |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
| Qualification | - |