KSR1004BU
TRANS PREBIAS NPN 50V TO92-3Manufacturer: Fairchild Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Fairchild Semiconductor KSR1004BU is an NPN pre-biased bipolar transistor designed for simplified circuit implementation. This device operates at a Collector-Emitter Voltage (Vce) breakdown of up to 50 V and can handle a continuous Collector Current (Ic) of 100 mA. The KSR1004BU features an integrated base resistor (R1) of 47 kOhms and an emitter-base resistor (R2) of 47 kOhms, facilitating direct connection to a voltage source for biasing. With a transition frequency (fT) of 250 MHz and a maximum power dissipation of 300 mW, it is suitable for applications requiring moderate switching speeds. The minimum DC current gain (hFE) is specified at 68 at 5 mA and 5 V. This component is supplied in a TO-92-3 through-hole package, commonly found in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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