FJY4013R
TRANS PREBIAS PNP 50V SOT523FManufacturer: Fairchild Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Fairchild Semiconductor FJY4013R is a PNP bipolar junction transistor featuring integrated base resistors for simplified circuit design. This pre-biased transistor operates with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a typical transition frequency of 200MHz and a power dissipation of 200mW. The device is supplied in a SOT-523F surface mount package (SC-89, SOT-490). Key specifications include a minimum DC current gain (hFE) of 68 at 5mA collector current and 5V Vce, with a collector-emitter saturation voltage of 300mV at 500µA base current and 10mA collector current. The internal base resistor (R1) is 2.2 kOhms, and the emitter-base resistor (R2) is 47 kOhms. This component is commonly utilized in industrial and consumer electronics for switching and amplification applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | SOT-523F |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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