FJY3005R
TRANS PREBIAS NPN 50V SOT523FManufacturer: Fairchild Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Fairchild Semiconductor FJY3005R is an NPN pre-biased bipolar transistor designed for surface mount applications. This component features integrated base resistors, specifically R1 at 4.7 kOhms and R2 at 10 kOhms, simplifying circuit design by eliminating external biasing components. It offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA, with a collector cutoff current of 100 nA (ICBO).
The FJY3005R exhibits a minimum DC current gain (hFE) of 30 at 5 mA and 5 V, and a transition frequency of 250 MHz. Its saturation voltage (Vce Sat) is a maximum of 300 mV at 500 µA base current and 10 mA collector current. With a maximum power dissipation of 200 mW, this device is suitable for use in consumer electronics and industrial control applications. The transistor is supplied in a SOT-523F package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 5V |
| Supplier Device Package | SOT-523F |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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