FJN4314RBU
TRANS PREBIAS PNP 50V TO92-3Manufacturer: Fairchild Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Fairchild Semiconductor FJN4314RBU is a PNP pre-biased bipolar junction transistor designed for general-purpose switching and amplification applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 (4.7 kOhms) and R2 (47 kOhms), simplify circuit design by eliminating the need for external biasing components. With a transition frequency of 200 MHz and a power dissipation of 300mW, the FJN4314RBU is suitable for use in various industrial and consumer electronics, including control circuits and signal conditioning. The device is supplied in a TO-92-3 through-hole package, facilitating easy integration onto printed circuit boards. Key performance parameters include a minimum DC current gain (hFE) of 68 at 5mA collector current and 5V collector-emitter voltage, and a saturation voltage (Vce(sat)) of 300mV at 500µA base current and 10mA collector current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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