FJN4310RBU
TRANS PREBIAS PNP 40V TO92-3Manufacturer: Fairchild Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Fairchild Semiconductor FJN4310RBU is a PNP pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This device features integrated base resistors, simplifying circuit design and reducing component count. Key electrical characteristics include a collector-emitter breakdown voltage (Vce) of 40V, a maximum collector current (Ic) of 100mA, and a transition frequency (fT) of 200MHz. The DC current gain (hFE) is a minimum of 100 at 1mA collector current and 5V collector-emitter voltage. With a maximum power dissipation of 300mW and a saturation voltage (Vce(sat)) of 300mV at 1mA base current and 10mA collector current, the FJN4310RBU is suitable for various general-purpose switching and amplification tasks. The base resistor (R1) is specified at 10 kOhms. This component is commonly employed in industrial automation, consumer electronics, and telecommunications equipment. The device is supplied in a TO-92-3 package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 300 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
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