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FJN3309RTA

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FJN3309RTA

TRANS PREBIAS NPN 40V TO92-3

Manufacturer: Fairchild Semiconductor

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Fairchild Semiconductor NPN Pre-Biased Transistor, part number FJN3309RTA. This TO-92-3 packaged device features a 40V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 250MHz and a power dissipation of 300mW, this transistor offers a minimum DC current gain (hFE) of 100 at 1mA and 5V. It includes an integrated base resistor (R1) of 4.7 kOhms, simplifying circuit design. The Vce saturation voltage is a maximum of 300mV at 1mA base current and 10mA collector current. This component is suitable for applications in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1mA, 5V
Supplier Device PackageTO-92-3
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max300 mW
Frequency - Transition250 MHz
Resistor - Base (R1)4.7 kOhms

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