FJN3304RBU
TRANS PREBIAS NPN 50V TO92-3Manufacturer: Fairchild Semiconductor
Categories: Single, Pre-Biased Bipolar Transistors
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Fairchild Semiconductor FJN3304RBU is an NPN pre-biased bipolar junction transistor offering a 50V collector-emitter breakdown voltage. With a maximum collector current of 100mA and a transition frequency of 250MHz, this device is suitable for general-purpose switching and amplification applications. It features integrated base resistors (R1 = 47 kOhms) and emitter base resistors (R2 = 47 kOhms), simplifying circuit design and reducing component count. The transistor exhibits a minimum DC current gain (hFE) of 68 at 5mA collector current and 5V collector-emitter voltage. Saturation voltage is specified at 300mV with a base current of 500µA and collector current of 10mA. The FJN3304RBU is housed in a TO-92-3 through-hole package and is supplied in bulk packaging. This component is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Mounting Type | Through Hole |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Supplier Device Package | TO-92-3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
| Frequency - Transition | 250 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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