SGW23N60UFDTM
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor SGW23N60UFDTM is a N-CHANNEL IGBT designed for high-performance power switching applications. This component offers a 600 V collector-emitter breakdown voltage and a continuous collector current of 23 A, with a pulsed capability up to 92 A. Featuring a low on-state voltage (Vce(on)) of 2.6 V at 15 V gate drive and 12 A collector current, it minimizes conduction losses. The TO-263 (D2PAK) surface mount package facilitates efficient thermal management for up to 100 W of power dissipation. Switching characteristics include a gate charge of 49 nC and typical turn-on/turn-off delays of 17 ns and 60 ns respectively at 25°C. Reverse recovery time is rated at 60 ns. This device is suitable for use in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 60 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 12A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 17ns/60ns |
| Switching Energy | 115µJ (on), 135µJ (off) |
| Test Condition | 300V, 12A, 23Ohm, 15V |
| Gate Charge | 49 nC |
| Current - Collector (Ic) (Max) | 23 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 92 A |
| Power - Max | 100 W |
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