SGS13N60UFDTU
IGBT, 13A, 600V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor SGS13N60UFDTU is a 600V, 13A N-channel Insulated Gate Bipolar Transistor (IGBT) in a TO-220F-3 package. This device features a maximum collector current of 13A with a pulsed capability of 52A. The on-state voltage (Vce(on)) is a maximum of 2.6V at 15V gate-source voltage and 6.5A collector current. With a gate charge of 25nC and switching energies of 85µJ (on) and 95µJ (off) under test conditions of 300V, 6.5A, 50 Ohm, and 15V, the SGS13N60UFDTU is suitable for power switching applications. The operating temperature range is -55°C to 150°C. This component is commonly found in power supply units, motor control, and industrial power conversion systems. The device is supplied in a tube package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 55 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 6.5A |
| Supplier Device Package | TO-220F-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/70ns |
| Switching Energy | 85µJ (on), 95µJ (off) |
| Test Condition | 300V, 6.5A, 50Ohm, 15V |
| Gate Charge | 25 nC |
| Current - Collector (Ic) (Max) | 13 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 52 A |
| Power - Max | 45 W |
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