SGS10N60RUFTU
IGBT, 16A, 600V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor SGS10N60RUFTU is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) suitable for power switching applications. This device features a continuous collector current rating of 16A and a pulsed collector current of 30A, with a maximum power dissipation of 55W. The IGBT exhibits a low on-state voltage of 2.8V at 15V gate-emitter voltage and 10A collector current. Switching characteristics include a gate charge of 30 nC and typical on/off times of 15ns/36ns at 25°C under test conditions of 300V, 10A, 20 Ohms, and 15V. The SGS10N60RUFTU is housed in a TO-220F-3 package, designed for through-hole mounting, and operates across a temperature range of -55°C to 150°C. This component is commonly utilized in power factor correction circuits, uninterruptible power supplies (UPS), and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 10A |
| Supplier Device Package | TO-220F-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/36ns |
| Switching Energy | 141µJ (on), 215µJ (off) |
| Test Condition | 300V, 10A, 20Ohm, 15V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 16 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 30 A |
| Power - Max | 55 W |
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