SGP40N60UFTU
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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The Fairchild Semiconductor SGP40N60UFTU is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component offers a continuous collector current of 40A and a pulsed collector current of 160A, with a maximum power dissipation of 160W. The SGP40N60UFTU features a low on-state voltage (Vce(on)) of 2.6V at 15V gate-emitter voltage and 20A collector current, and a typical gate charge of 97nC. Switching characteristics include an on-time of 15ns and an off-time of 65ns at 25°C, with switching energies of 160µJ (on) and 200µJ (off) under specified test conditions. The TO-220-3 package with a through-hole mounting type ensures robust thermal performance. This IGBT is suitable for use in power factor correction, uninterruptible power supplies, and motor drive applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 20A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/65ns |
| Switching Energy | 160µJ (on), 200µJ (off) |
| Test Condition | 300V, 20A, 10Ohm, 15V |
| Gate Charge | 97 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 160 W |
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