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SGP15N60RUFTU

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SGP15N60RUFTU

N-CHANNEL IGBT

Manufacturer: Fairchild Semiconductor

Categories: Single IGBTs

Quality Control: Learn More

Fairchild Semiconductor SGP15N60RUFTU is a 600V N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This through-hole component, housed in a TO-220-3 package, features a continuous collector current rating of 24A (45A pulsed) and a maximum power dissipation of 160W. The device exhibits a Vce(on) of 2.8V at 15V gate drive and 15A collector current. Key switching characteristics include a gate charge of 42nC and typical on/off times of 17ns/44ns at 25°C under specified test conditions. Operating temperature ranges from -55°C to 150°C. This IGBT is suitable for use in industrial power supplies, motor control, and uninterruptible power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 15A
Supplier Device PackageTO-220-3
IGBT Type-
Td (on/off) @ 25°C17ns/44ns
Switching Energy320µJ (on), 356µJ (off)
Test Condition300V, 15A, 13Ohm, 15V
Gate Charge42 nC
Current - Collector (Ic) (Max)24 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)45 A
Power - Max160 W

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