SGP13N60UFDTU
IGBT 600V 13A TO220-3Manufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor SGP13N60UFDTU is a 600V, 13A Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This device features a maximum collector current of 13A and a pulsed collector current of 52A. The collector-emitter saturation voltage (Vce(on)) is 2.6V at 15V gate-emitter voltage and 6.5A collector current. With a gate charge of 25 nC and switching energies of 85µJ (on) and 95µJ (off) under specified test conditions (300V, 6.5A, 50O, 15V), it offers efficient switching performance. The IGBT operates across a temperature range of -55°C to 150°C. Packaged in a standard TO-220-3 through-hole configuration, this component is suitable for use in various power electronics systems, including industrial motor drives, uninterruptible power supplies (UPS), and lighting control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 55 ns |
| Vce(on) (Max) @ Vge, Ic | 2.6V @ 15V, 6.5A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 20ns/70ns |
| Switching Energy | 85µJ (on), 95µJ (off) |
| Test Condition | 300V, 6.5A, 50Ohm, 15V |
| Gate Charge | 25 nC |
| Current - Collector (Ic) (Max) | 13 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 52 A |
| Power - Max | 60 W |
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