SGL40N150DTU
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's SGL40N150DTU is a high-voltage, N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a 1500 V collector-emitter breakdown voltage and a continuous collector current rating of 40 A, with a pulsed capability of 120 A. The SGL40N150DTU offers a maximum power dissipation of 200 W and exhibits a Vce(on) of 4.7 V at 15 V gate-emitter voltage and 40 A collector current. With a gate charge of 140 nC and a reverse recovery time of 300 ns, this IGBT is suitable for applications requiring efficient switching. The device is housed in a TO-264-3, TO-264AA package, facilitating through-hole mounting. Its operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in industrial power conversion, motor control, and high-voltage power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 300 ns |
| Vce(on) (Max) @ Vge, Ic | 4.7V @ 15V, 40A |
| Supplier Device Package | HPM F2 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 140 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 1500 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 200 W |
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