HGTP3N60A4D
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor HGTP3N60A4D is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power switching applications. This component features a 600 V collector-emitter breakdown voltage and a continuous collector current rating of 17 A, with a pulsed capability of 40 A. The HGTP3N60A4D offers low switching energy with typical values of 37 µJ (on) and 25 µJ (off) at a test condition of 390 V, 3 A, 50 Ohm, and 15 V gate drive. Its on-state voltage (Vce(on)) is a maximum of 2.7 V at 15 V gate-emitter voltage and 3 A collector current, with typical turn-on and turn-off delays of 6 ns and 73 ns respectively. The device has a maximum power dissipation of 70 W and a gate charge of 21 nC. Packaged in a TO-220-3 through-hole configuration, it operates across an extended temperature range of -55°C to 150°C. This IGBT is suitable for use in industrial motor drives, uninterruptible power supplies (UPS), and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 29 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 3A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 6ns/73ns |
| Switching Energy | 37µJ (on), 25µJ (off) |
| Test Condition | 390V, 3A, 50Ohm, 15V |
| Gate Charge | 21 nC |
| Current - Collector (Ic) (Max) | 17 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 70 W |
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