HGTP12N60A4D
INSULATED GATE BIPOLAR TRANSISTOManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
Quality Control: Learn More
IGBT 600 V 54 A 167 W Through Hole TO-220-3
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 30 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 17ns/96ns |
| Switching Energy | 55µJ (on), 50µJ (off) |
| Test Condition | 390V, 12A, 10Ohm, 15V |
| Gate Charge | 78 nC |
| Current - Collector (Ic) (Max) | 54 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 167 W |
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