HGTP12N60A4
UFS SERIES N-CH IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor HGTP12N60A4 is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, packaged in a TO-220-3 configuration, features a continuous collector current (Ic) of 54A and a pulsed collector current (Icm) of 96A. The device exhibits a maximum collector-emitter voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 12A collector current. With a gate charge of 78 nC and switching energies of 55µJ (on) and 50µJ (off) under specified test conditions (390V, 12A, 10O, 15V), it offers efficient switching performance. The HGTP12N60A4 has a maximum power dissipation of 167W and operates across a temperature range of -55°C to 150°C. This component is commonly found in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 12A |
| Supplier Device Package | TO-220-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 17ns/96ns |
| Switching Energy | 55µJ (on), 50µJ (off) |
| Test Condition | 390V, 12A, 10Ohm, 15V |
| Gate Charge | 78 nC |
| Current - Collector (Ic) (Max) | 54 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 96 A |
| Power - Max | 167 W |
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