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HGTP12N60A4

UFS SERIES N-CH IGBT

Manufacturer: Fairchild Semiconductor

Categories: Single IGBTs

Quality Control: Learn More

Fairchild Semiconductor HGTP12N60A4 is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, packaged in a TO-220-3 configuration, features a continuous collector current (Ic) of 54A and a pulsed collector current (Icm) of 96A. The device exhibits a maximum collector-emitter voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 12A collector current. With a gate charge of 78 nC and switching energies of 55µJ (on) and 50µJ (off) under specified test conditions (390V, 12A, 10O, 15V), it offers efficient switching performance. The HGTP12N60A4 has a maximum power dissipation of 167W and operates across a temperature range of -55°C to 150°C. This component is commonly found in industrial power supplies, motor control, and lighting applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 1 week(s)Product Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-220-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A
Supplier Device PackageTO-220-3
IGBT Type-
Td (on/off) @ 25°C17ns/96ns
Switching Energy55µJ (on), 50µJ (off)
Test Condition390V, 12A, 10Ohm, 15V
Gate Charge78 nC
Current - Collector (Ic) (Max)54 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)96 A
Power - Max167 W

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