HGTG11N120CN
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor HGTG11N120CN is an N-Channel IGBT designed for high-voltage applications. This NPT (Non-Punch-Through) IGBT offers a collector-emitter breakdown voltage of 1200 V and a continuous collector current capability of 43 A, with a pulsed capability of 80 A. It features a low on-state voltage of 2.4 V at 15 V gate-emitter voltage and 11 A collector current, with typical switching times of 23 ns turn-on and 180 ns turn-off under specified test conditions. The device dissipates up to 298 W and operates within an extended temperature range of -55°C to 150°C (TJ). Supplied in a TO-247-3 package for through-hole mounting, this IGBT is suitable for power switching applications in industries such as industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 11A |
| Supplier Device Package | TO-247 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 23ns/180ns |
| Switching Energy | 400µJ (on), 1.3mJ (off) |
| Test Condition | 960V, 11A, 10Ohm, 15V |
| Gate Charge | 100 nC |
| Current - Collector (Ic) (Max) | 43 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 298 W |
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