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HGT1S3N60A4DS9A

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HGT1S3N60A4DS9A

N-CHANNEL IGBT

Manufacturer: Fairchild Semiconductor

Categories: Single IGBTs

Quality Control: Learn More

Fairchild Semiconductor HGT1S3N60A4DS9A is an N-channel IGBT designed for high-voltage applications. This component offers a collector-emitter breakdown voltage of 600 V and a continuous collector current (Ic) capability of 17 A, with a pulsed current (Icm) rating of 40 A. The device features a maximum power dissipation of 70 W and a low gate charge of 21 nC, contributing to efficient switching performance with typical on-state and off-state switching energies of 37µJ and 25µJ respectively, as specified under test conditions of 390V, 3A, 50Ohm, and 15V. The on-state voltage (Vce(on)) is a maximum of 2.7V at 15V gate drive and 3A collector current. Packaged in a TO-263-3, D2PAK surface mount configuration, this IGBT is suitable for use in power supply units, motor control, and industrial automation. The operating temperature range is from -55°C to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: UnknownPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)29 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 3A
Supplier Device PackageTO-263 (D2PAK)
IGBT Type-
Td (on/off) @ 25°C6ns/73ns
Switching Energy37µJ (on), 25µJ (off)
Test Condition390V, 3A, 50Ohm, 15V
Gate Charge21 nC
Current - Collector (Ic) (Max)17 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)40 A
Power - Max70 W

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