HGT1S3N60A4DS9A
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor HGT1S3N60A4DS9A is an N-channel IGBT designed for high-voltage applications. This component offers a collector-emitter breakdown voltage of 600 V and a continuous collector current (Ic) capability of 17 A, with a pulsed current (Icm) rating of 40 A. The device features a maximum power dissipation of 70 W and a low gate charge of 21 nC, contributing to efficient switching performance with typical on-state and off-state switching energies of 37µJ and 25µJ respectively, as specified under test conditions of 390V, 3A, 50Ohm, and 15V. The on-state voltage (Vce(on)) is a maximum of 2.7V at 15V gate drive and 3A collector current. Packaged in a TO-263-3, D2PAK surface mount configuration, this IGBT is suitable for use in power supply units, motor control, and industrial automation. The operating temperature range is from -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 29 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 3A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 6ns/73ns |
| Switching Energy | 37µJ (on), 25µJ (off) |
| Test Condition | 390V, 3A, 50Ohm, 15V |
| Gate Charge | 21 nC |
| Current - Collector (Ic) (Max) | 17 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 70 W |
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