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HGT1S2N120CN

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HGT1S2N120CN

N-CHANNEL IGBT

Manufacturer: Fairchild Semiconductor

Categories: Single IGBTs

Quality Control: Learn More

Fairchild Semiconductor HGT1S2N120CN is an N-CHANNEL IGBT designed for high-voltage applications. This NPT IGBT features a breakdown voltage of 1200 V and a continuous collector current of 13 A, with a pulsed current capability of 20 A. The device offers a maximum power dissipation of 104 W. Key switching parameters include a gate charge of 30 nC and switching energies of 96µJ (on) and 355µJ (off) at 960V, 2.6A, 51 Ohm, 15V. The on-state voltage (Vce(on)) is a maximum of 2.4V at 15V gate drive and 2.6A collector current. Packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA configuration, suitable for through-hole mounting, this component operates across a temperature range of -55°C to 150°C. It finds application in power supply and industrial motor control sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: UnknownPackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 2.6A
Supplier Device PackageTO-262
IGBT TypeNPT
Td (on/off) @ 25°C25ns/205ns
Switching Energy96µJ (on), 355µJ (off)
Test Condition960V, 2.6A, 51Ohm, 15V
Gate Charge30 nC
Current - Collector (Ic) (Max)13 A
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector Pulsed (Icm)20 A
Power - Max104 W

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