HGT1S2N120CN
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor HGT1S2N120CN is an N-CHANNEL IGBT designed for high-voltage applications. This NPT IGBT features a breakdown voltage of 1200 V and a continuous collector current of 13 A, with a pulsed current capability of 20 A. The device offers a maximum power dissipation of 104 W. Key switching parameters include a gate charge of 30 nC and switching energies of 96µJ (on) and 355µJ (off) at 960V, 2.6A, 51 Ohm, 15V. The on-state voltage (Vce(on)) is a maximum of 2.4V at 15V gate drive and 2.6A collector current. Packaged in a TO-262-3 Long Leads, I2PAK, TO-262AA configuration, suitable for through-hole mounting, this component operates across a temperature range of -55°C to 150°C. It finds application in power supply and industrial motor control sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 2.6A |
| Supplier Device Package | TO-262 |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 25ns/205ns |
| Switching Energy | 96µJ (on), 355µJ (off) |
| Test Condition | 960V, 2.6A, 51Ohm, 15V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 13 A |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector Pulsed (Icm) | 20 A |
| Power - Max | 104 W |
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