HGT1S20N36G3VL
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's HGT1S20N36G3VL is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This through-hole component, housed in a TO-262 (I2PAK) package, features a collector-emitter breakdown voltage of 395 V and a maximum continuous collector current of 37.7 A. With a power dissipation capability of 150 W and a low collector-emitter saturation voltage (Vce(on)) of 1.9 V at 5 V gate-source voltage and 20 A collector current, it offers efficient switching. The device exhibits a typical gate charge of 28.7 nC and operates across a wide temperature range of -40°C to 175°C (TJ). This IGBT is suitable for use in power supply circuits, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 5V, 20A |
| Supplier Device Package | TO-262 (I2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/15µs |
| Switching Energy | - |
| Test Condition | 300V, 10A, 25Ohm, 5V |
| Gate Charge | 28.7 nC |
| Current - Collector (Ic) (Max) | 37.7 A |
| Voltage - Collector Emitter Breakdown (Max) | 395 V |
| Power - Max | 150 W |
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