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HGT1S20N36G3VL

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HGT1S20N36G3VL

N-CHANNEL IGBT

Manufacturer: Fairchild Semiconductor

Categories: Single IGBTs

Quality Control: Learn More

Fairchild Semiconductor's HGT1S20N36G3VL is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This through-hole component, housed in a TO-262 (I2PAK) package, features a collector-emitter breakdown voltage of 395 V and a maximum continuous collector current of 37.7 A. With a power dissipation capability of 150 W and a low collector-emitter saturation voltage (Vce(on)) of 1.9 V at 5 V gate-source voltage and 20 A collector current, it offers efficient switching. The device exhibits a typical gate charge of 28.7 nC and operates across a wide temperature range of -40°C to 175°C (TJ). This IGBT is suitable for use in power supply circuits, motor control, and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Mounting TypeThrough Hole
Operating Temperature-40°C ~ 175°C (TJ)
Input TypeLogic
Vce(on) (Max) @ Vge, Ic1.9V @ 5V, 20A
Supplier Device PackageTO-262 (I2PAK)
IGBT Type-
Td (on/off) @ 25°C-/15µs
Switching Energy-
Test Condition300V, 10A, 25Ohm, 5V
Gate Charge28.7 nC
Current - Collector (Ic) (Max)37.7 A
Voltage - Collector Emitter Breakdown (Max)395 V
Power - Max150 W

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