HGT1S14N36G3VLT
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
Quality Control: Learn More
Fairchild Semiconductor presents the HGT1S14N36G3VLT, a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT). This component features a collector-emitter breakdown voltage of 390V and a maximum collector current of 18A. With a low on-state voltage of 2.2V at 5V gate-emitter voltage and 14A collector current, it offers efficient power handling capabilities. The IGBT is rated for a maximum power dissipation of 100W and operates across a wide temperature range of -40°C to 175°C. Its through-hole mounting with a TO-262-3 Long Leads, I2PAK package facilitates integration into various power electronic designs. This device is suitable for applications in industrial motor control, power supplies, and lighting systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Input Type | Logic |
| Vce(on) (Max) @ Vge, Ic | 2.2V @ 5V, 14A |
| Supplier Device Package | TO-262 (I2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | -/7µs |
| Switching Energy | - |
| Test Condition | 300V, 7A, 25Ohm, 5V |
| Gate Charge | 24 nC |
| Current - Collector (Ic) (Max) | 18 A |
| Voltage - Collector Emitter Breakdown (Max) | 390 V |
| Power - Max | 100 W |
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