FGPF70N30
IGBT 300V 52W TO220FManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor FGPF70N30 is a 300V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for power switching applications. This component features a collector-emitter voltage (Vce) of 300V and a continuous collector current (Ic) capability of 70A, with a pulsed current (Icm) of 160A. The on-state voltage drop (Vce(on)) is specified at 1.5V maximum with a gate-emitter voltage (Vge) of 15V and a collector current (Ic) of 20A.
With a maximum power dissipation of 52W and a gate charge (Qg) of 71 nC, the FGPF70N30 is suitable for demanding applications. It operates across a wide temperature range from -55°C to 150°C. The device is housed in a TO-220F package, offering a through-hole mounting solution. This IGBT is commonly found in power supply units, motor control systems, and industrial automation.
Additional Information
Series: -RoHS Status: Not applicableManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 20A |
| Supplier Device Package | TO-220F |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 71 nC |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 52 W |
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