FGPF30N30TTU
IGBT, 300V, N-CHANNEL, TO-220ABManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's FGPF30N30TTU is a high-performance N-channel Trench IGBT designed for demanding power applications. This component offers a 300V collector-emitter breakdown voltage and a continuous collector current capability of 10A under typical test conditions (200V, 20A, 20 Ohms, 15V). With a maximum power dissipation of 44.6W and a low on-state voltage of 1.5V at 15V gate drive and 10A collector current, it ensures efficient operation. The FGPF30N30TTU features a typical gate charge of 65 nC and switching times of 22ns (turn-on) and 130ns (turn-off) at 25°C. Its robust TO-220F-3 package with through-hole mounting is suitable for industrial power supplies, motor control, and welding equipment. The device operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 10A |
| Supplier Device Package | TO-220F-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 22ns/130ns |
| Switching Energy | - |
| Test Condition | 200V, 20A, 20Ohm, 15V |
| Gate Charge | 65 nC |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 44.6 W |
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