FGPF30N30TDTU
IGBT, 300V, N-CHANNEL, TO-220ABManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor FGPF30N30TDTU Trench IGBT with a 300V collector-emitter breakdown voltage. This N-channel device features a maximum power dissipation of 44.6W and an on-state voltage (Vce(on)) of 1.5V at 15V gate-emitter voltage and 10A collector current. The FGPF30N30TDTU exhibits a typical gate charge of 65nC and a reverse recovery time (trr) of 22ns, with switching times (Td(on)/off)) of 22ns/130ns under test conditions of 200V, 20A, 20 Ohm, and 15V. Designed for through-hole mounting, it is supplied in a TO-220F-3 package and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in industrial motor drives and power factor correction circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 22 ns |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 10A |
| Supplier Device Package | TO-220F-3 |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | 22ns/130ns |
| Switching Energy | - |
| Test Condition | 200V, 20A, 20Ohm, 15V |
| Gate Charge | 65 nC |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 44.6 W |
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