FGPF30N30
IGBT, 300V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's FGPF30N30 is a 300V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-efficiency power switching applications. This through-hole component features a collector-emitter voltage (Vce) of 300V and a maximum continuous collector current of 30A, with a pulsed collector current (Icm) rating of 80A. The Vce(on) is specified at 1.5V at 15V gate-emitter voltage and 10A collector current. With a maximum power dissipation of 46W and a gate charge of 39 nC, the FGPF30N30 is suitable for demanding industrial environments, operating across a temperature range of -55°C to 150°C. The TO-220F-3 package ensures robust thermal performance and ease of integration into existing designs. This device is commonly found in power supplies, motor control, and industrial automation systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 10A |
| Supplier Device Package | TO-220F-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 39 nC |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 80 A |
| Power - Max | 46 W |
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