FGPF120N30TU
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
Quality Control: Learn More
Fairchild Semiconductor's FGPF120N30TU is a high-performance N-channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component features a robust 300V collector-emitter breakdown voltage and a continuous collector current capability of 120A, with a pulsed current rating of 180A. The low on-state voltage of 1.4V at 15V gate-emitter voltage and 25A collector current minimizes conduction losses. With a maximum power dissipation of 60W and a wide operating temperature range from -55°C to 150°C, the FGPF120N30TU is suitable for use in industrial motor control, power supply units, and renewable energy systems. Packaged in a TO-220F-3 full pack for through-hole mounting, this device ensures reliable performance in challenging environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 25A |
| Supplier Device Package | TO-220F-3 |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 112 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 60 W |
Request a Quote
Clients Also Buy
FGB7N60UNDF
IGBT NPT 600V 14A TO263
SGP40N60UFTU
N-CHANNEL IGBT
ISL9V3036D3ST
N-CHANNEL IGBT
