FGI40N60SFTU
IGBT, 80A, 600V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor FGI40N60SFTU is a 600 V N-Channel Field Stop Insulated Gate Bipolar Transistor (IGBT). This component offers a continuous collector current of 80 A and a pulsed collector current of 120 A, with a maximum power dissipation of 290 W. The Vce(on) is rated at a maximum of 2.9V at 15V gate-emitter voltage and 40A collector current, under a test condition of 400V, 40A, 10 Ohm, and 15V. Switching characteristics include an on-state delay (Td(on)) of 25 ns and an off-state delay (Td(off)) of 115 ns at 25°C, with corresponding switching energies of 1.13 mJ (on) and 310 µJ (off). The device features a standard input type and is housed in a TO-262 (I2PAK) package with through-hole mounting. Operating temperature range is -55°C to 150°C. This IGBT is suitable for applications in power supplies, motor control, and industrial automation.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 40A |
| Supplier Device Package | TO-262 (I2PAK) |
| IGBT Type | Field Stop |
| Td (on/off) @ 25°C | 25ns/115ns |
| Switching Energy | 1.13mJ (on), 310µJ (off) |
| Test Condition | 400V, 40A, 10Ohm, 15V |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 290 W |
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