FGH50N6S2
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor presents the FGH50N6S2, a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power applications. This component offers a robust 600V collector-emitter breakdown voltage and a continuous collector current capability of 75A (240A pulsed), with a maximum power dissipation of 463W. It features a low on-state voltage of 2.7V at 15V gate-emitter voltage and 30A collector current. Switching characteristics include turn-on delay of 13ns and turn-off delay of 55ns at 25°C, with associated switching energies of 260µJ (on) and 250µJ (off). The FGH50N6S2 utilizes standard input and is supplied in a TO-247-3 through-hole package, suitable for operation across a wide temperature range of -55°C to 150°C. This device is commonly found in industrial motor drives and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
| Supplier Device Package | TO-247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 13ns/55ns |
| Switching Energy | 260µJ (on), 250µJ (off) |
| Test Condition | 390V, 30A, 3Ohm, 15V |
| Gate Charge | 70 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 240 A |
| Power - Max | 463 W |
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