FGH30N6S2
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
Quality Control: Learn More
Fairchild Semiconductor's FGH30N6S2 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This device features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 45A, with a pulsed capability of 108A. The FGH30N6S2 offers a maximum on-state voltage (Vce(on)) of 2.5V at 15V gate-emitter voltage and 12A collector current. Its switching characteristics include typical turn-on delay (Td(on)) of 6ns and turn-off delay (Td(off)) of 40ns at 25°C, with switching energies of 55µJ (on) and 100µJ (off) under specified test conditions (390V, 12A, 10O, 15V). The IGBT dissipates a maximum power of 167W and operates across a wide temperature range of -55°C to 150°C (TJ). Packaged in a TO-247-3 configuration with through-hole mounting, this component is suitable for industrial automation, motor control, and power supply applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 12A |
| Supplier Device Package | TO-247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 6ns/40ns |
| Switching Energy | 55µJ (on), 100µJ (off) |
| Test Condition | 390V, 12A, 10Ohm, 15V |
| Gate Charge | 23 nC |
| Current - Collector (Ic) (Max) | 45 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 108 A |
| Power - Max | 167 W |
Request a Quote
Clients Also Buy
FGPF70N30TRDTU
IGBT 300V 70A
FGPF50N30TTU
IGBT, 300V, N-CHANNEL, TO-220AB
HGT1S20N36G3VLS
IGBT, 37.7A, 355V, N-CHANNEL
