FGH20N6S2D
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's FGH20N6S2D is a 600V N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This through-hole component, housed in a TO-247-3 package, offers a continuous collector current of 28A and a pulsed collector current of 40A. Key performance characteristics include a low on-state voltage of 2.7V at 15V Vge and 7A Ic, a gate charge of 30nC, and switching times of 7.7ns (td(on)) and 87ns (td(off)) at 25°C under a 390V, 7A, 25 Ohm, 15V test condition. The device boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. The FGH20N6S2D is suitable for use in power switching circuits across various industries, including industrial motor control and power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 31 ns |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A |
| Supplier Device Package | TO-247 |
| IGBT Type | - |
| Td (on/off) @ 25°C | 7.7ns/87ns |
| Switching Energy | 25µJ (on), 58µJ (off) |
| Test Condition | 390V, 7A, 25Ohm, 15V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 28 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 125 W |
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