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FGH20N6S2D

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FGH20N6S2D

N-CHANNEL IGBT

Manufacturer: Fairchild Semiconductor

Categories: Single IGBTs

Quality Control: Learn More

Fairchild Semiconductor's FGH20N6S2D is a 600V N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. This through-hole component, housed in a TO-247-3 package, offers a continuous collector current of 28A and a pulsed collector current of 40A. Key performance characteristics include a low on-state voltage of 2.7V at 15V Vge and 7A Ic, a gate charge of 30nC, and switching times of 7.7ns (td(on)) and 87ns (td(off)) at 25°C under a 390V, 7A, 25 Ohm, 15V test condition. The device boasts a maximum power dissipation of 125W and operates within a temperature range of -55°C to 150°C. The FGH20N6S2D is suitable for use in power switching circuits across various industries, including industrial motor control and power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)31 ns
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 7A
Supplier Device PackageTO-247
IGBT Type-
Td (on/off) @ 25°C7.7ns/87ns
Switching Energy25µJ (on), 58µJ (off)
Test Condition390V, 7A, 25Ohm, 15V
Gate Charge30 nC
Current - Collector (Ic) (Max)28 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)40 A
Power - Max125 W

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