FGB40N6S2
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's FGB40N6S2 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding applications. This component features a 600V collector-emitter breakdown voltage and a continuous collector current rating of 75A, with a pulsed capability of 180A. The FGB40N6S2 boasts a maximum power dissipation of 290W and a low collector-emitter saturation voltage of 2.7V at 15V gate-emitter voltage and 20A collector current. Switching characteristics include a gate charge of 35 nC and typical on/off times of 8ns/35ns respectively, tested at 390V, 20A, 3 Ohm, and 15V. Packaged in a TO-263 (D2PAK) surface-mount configuration, this IGBT is suitable for operation across a wide temperature range of -55°C to 150°C. It finds application in power supply, motor control, and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 20A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 8ns/35ns |
| Switching Energy | 115µJ (on), 195µJ (off) |
| Test Condition | 390V, 20A, 3Ohm, 15V |
| Gate Charge | 35 nC |
| Current - Collector (Ic) (Max) | 75 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 180 A |
| Power - Max | 290 W |
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