FGB20N6S2
N-CHANNEL IGBTManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's FGB20N6S2 is a 600V N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for surface mounting in a TO-263 (D2PAK) package. This component features a continuous collector current (Ic) capability of 28A, with a pulsed collector current (Icm) of 40A. The device exhibits a maximum on-state voltage (Vce(on)) of 2.7V at 15V gate-emitter voltage and 7A collector current. Switching characteristics include typical turn-on delay (Td(on)) of 7.7ns and turn-off delay (Td(off)) of 87ns at 25°C, with corresponding switching energies of 25µJ (on) and 58µJ (off) under test conditions of 390V, 7A, 25 Ohm, and 15V. With a maximum power dissipation of 125W and an operating temperature range of -55°C to 150°C, the FGB20N6S2 is suitable for applications in power supply switching, motor control, and general industrial power conversion.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 7A |
| Supplier Device Package | TO-263 (D2PAK) |
| IGBT Type | - |
| Td (on/off) @ 25°C | 7.7ns/87ns |
| Switching Energy | 25µJ (on), 58µJ (off) |
| Test Condition | 390V, 7A, 25Ohm, 15V |
| Gate Charge | 30 nC |
| Current - Collector (Ic) (Max) | 28 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 40 A |
| Power - Max | 125 W |
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