FGA90N30TU
IGBT 300V 90A TO3PManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's FGA90N30TU is a 300V, 90A Insulated Gate Bipolar Transistor (IGBT) housed in a TO-3P package. This through-hole component offers a maximum power dissipation of 219W and a collector current of 90A, with a pulsed collector current capability of 220A. Key electrical characteristics include a Vce(on) of 1.4V at 15V Vge and 20A Ic, and a gate charge of 87 nC. The FGA90N30TU is specified for operation across a temperature range of -55°C to 150°C (TJ). This device is suitable for applications in industrial power supplies, motor control, and welding equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 20A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 87 nC |
| Current - Collector (Ic) (Max) | 90 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 220 A |
| Power - Max | 219 W |
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