FGA70N30TTU
IGBT, 300V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's FGA70N30TTU is a high-performance N-channel Trench IGBT designed for demanding power switching applications. This component boasts a 300V collector-emitter breakdown voltage and a continuous collector current capability of 70A, with a pulsed current rating (Icm) of 160A. The low on-state voltage (Vce(on)) of 1.5V at 15V gate-emitter voltage and 20A collector current ensures minimal conduction losses. With a maximum power dissipation of 201W, the FGA70N30TTU is suitable for applications requiring efficient power handling. Its Trench IGBT technology contributes to improved switching speed and reduced switching losses. The component is offered in a TO-3PN package, facilitating through-hole mounting. The operating temperature range is -55°C to 150°C (TJ). This device finds application in industrial power supplies, motor control, and other high-power switching systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 20A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 125 nC |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 201 W |
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