FGA70N30TDTU
IGBT, 40A, 300V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor IGBT, FGA70N30TDTU, a trench N-channel IGBT, offers a 300V collector-emitter breakdown voltage. This component is rated for 70A continuous collector current and features a peak current capability of 160A. With a maximum power dissipation of 201W, it is designed for demanding high-power applications. The on-state voltage (Vce(on)) is a maximum of 1.5V at 15V gate-emitter voltage and 20A collector current. Key parameters include a gate charge of 125nC and a reverse recovery time (trr) of 21ns. The FGA70N30TDTU is supplied in a TO-3PN through-hole package, facilitating robust mounting. This IGBT is suitable for use in industrial motor drives, power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 21 ns |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 20A |
| Supplier Device Package | TO-3PN |
| IGBT Type | Trench |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 125 nC |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 201 W |
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