FGA50N100BNTTU
IGBT, 50A, 1000V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's FGA50N100BNTTU is a high-performance NPT and Trench IGBT featuring a 1000 V collector-emitter breakdown voltage and a continuous collector current of 50 A. This through-hole component, packaged in a TO-3P, offers a pulsed collector current capability of 200 A and a maximum power dissipation of 156 W. Key electrical characteristics include a gate charge of 257 nC and a typical on-state voltage (Vce(on)) of 2.9V at 15V gate drive and 60A collector current. Switching performance at 600V, 60A, and 10 Ohm load is characterized by a turn-on delay of 34 ns and a turn-off delay of 243 ns. Operating across a wide temperature range of -55°C to 150°C, this device is suitable for demanding applications in power conversion, motor control, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Vce(on) (Max) @ Vge, Ic | 2.9V @ 15V, 60A |
| Supplier Device Package | TO-3P |
| IGBT Type | NPT and Trench |
| Td (on/off) @ 25°C | 34ns/243ns |
| Switching Energy | - |
| Test Condition | 600V, 60A, 10Ohm, 15V |
| Gate Charge | 257 nC |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector Pulsed (Icm) | 200 A |
| Power - Max | 156 W |
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