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FGA40T65UQDF

INSULATED GATE BIPOLAR TRANSISTO

Manufacturer: Fairchild Semiconductor

Categories: Single IGBTs

Quality Control: Learn More

Fairchild Semiconductor's FGA40T65UQDF is a 650V NPT Insulated Gate Bipolar Transistor. This through-hole component, housed in a TO-3PN package, offers a continuous collector current of 80A and a pulsed collector current of 120A. With a maximum power dissipation of 231W and a collector-emitter saturation voltage of 1.67V at 15V gate-emitter voltage and 40A collector current, it is designed for demanding power applications. Key parameters include a gate charge of 306nC and switching energies of 989µJ (on) and 310µJ (off) under test conditions of 400V, 40A, 6 Ohm, and 15V. The device operates across a temperature range of -55°C to 175°C. This component is suitable for use in industrial motor drives and power factor correction circuits.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)89 ns
Vce(on) (Max) @ Vge, Ic1.67V @ 15V, 40A
Supplier Device PackageTO-3PN
IGBT TypeNPT
Td (on/off) @ 25°C32ns/271ns
Switching Energy989µJ (on), 310µJ (off)
Test Condition400V, 40A, 6Ohm, 15V
Gate Charge306 nC
Current - Collector (Ic) (Max)80 A
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector Pulsed (Icm)120 A
Power - Max231 W

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