FGA40T65UQDF
INSULATED GATE BIPOLAR TRANSISTOManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's FGA40T65UQDF is a 650V NPT Insulated Gate Bipolar Transistor. This through-hole component, housed in a TO-3PN package, offers a continuous collector current of 80A and a pulsed collector current of 120A. With a maximum power dissipation of 231W and a collector-emitter saturation voltage of 1.67V at 15V gate-emitter voltage and 40A collector current, it is designed for demanding power applications. Key parameters include a gate charge of 306nC and switching energies of 989µJ (on) and 310µJ (off) under test conditions of 400V, 40A, 6 Ohm, and 15V. The device operates across a temperature range of -55°C to 175°C. This component is suitable for use in industrial motor drives and power factor correction circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 89 ns |
| Vce(on) (Max) @ Vge, Ic | 1.67V @ 15V, 40A |
| Supplier Device Package | TO-3PN |
| IGBT Type | NPT |
| Td (on/off) @ 25°C | 32ns/271ns |
| Switching Energy | 989µJ (on), 310µJ (off) |
| Test Condition | 400V, 40A, 6Ohm, 15V |
| Gate Charge | 306 nC |
| Current - Collector (Ic) (Max) | 80 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector Pulsed (Icm) | 120 A |
| Power - Max | 231 W |
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