FGA40N60UFDTU
IGBT, 40A, 600V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor's FGA40N60UFDTU is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, housed in a TO-3P package, offers a continuous collector current of 40A and a pulsed collector current of 160A. Key parameters include a Vce(on) of 3V at 15V/20A and a gate charge of 77 nC. Switching characteristics are defined by a typical turn-on delay (Td(on)) of 15ns and turn-off delay (Td(off)) of 65ns at 25°C, with a reverse recovery time (trr) of 95ns. The device dissipates a maximum power of 160W and operates across a temperature range of -55°C to 150°C. This IGBT is suitable for applications in industrial motor drives and power supply systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 95 ns |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 20A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | 15ns/65ns |
| Switching Energy | 470µJ (on), 130µJ (off) |
| Test Condition | 300V, 20A, 10Ohm, 15V |
| Gate Charge | 77 nC |
| Current - Collector (Ic) (Max) | 40 A |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector Pulsed (Icm) | 160 A |
| Power - Max | 160 W |
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