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FGA40N60UFDTU

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FGA40N60UFDTU

IGBT, 40A, 600V, N-CHANNEL

Manufacturer: Fairchild Semiconductor

Categories: Single IGBTs

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Fairchild Semiconductor's FGA40N60UFDTU is a 600V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This through-hole component, housed in a TO-3P package, offers a continuous collector current of 40A and a pulsed collector current of 160A. Key parameters include a Vce(on) of 3V at 15V/20A and a gate charge of 77 nC. Switching characteristics are defined by a typical turn-on delay (Td(on)) of 15ns and turn-off delay (Td(off)) of 65ns at 25°C, with a reverse recovery time (trr) of 95ns. The device dissipates a maximum power of 160W and operates across a temperature range of -55°C to 150°C. This IGBT is suitable for applications in industrial motor drives and power supply systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-3P-3, SC-65-3
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Input TypeStandard
Reverse Recovery Time (trr)95 ns
Vce(on) (Max) @ Vge, Ic3V @ 15V, 20A
Supplier Device PackageTO-3P
IGBT Type-
Td (on/off) @ 25°C15ns/65ns
Switching Energy470µJ (on), 130µJ (off)
Test Condition300V, 20A, 10Ohm, 15V
Gate Charge77 nC
Current - Collector (Ic) (Max)40 A
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector Pulsed (Icm)160 A
Power - Max160 W

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