FGA180N30DTU
IGBT, 180A, 300V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor FGA180N30DTU is a robust N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-power switching applications. This component offers a continuous collector current (Ic) capability of 180A, with a pulsed collector current (Icm) of 450A, and a maximum collector-emitter voltage (Vce) of 300V. The device features a low on-state voltage (Vce(on)) of 1.4V at 15V gate-emitter voltage and 40A collector current, contributing to reduced conduction losses. With a maximum power dissipation of 480W and a gate charge of 185 nC, it is suitable for demanding applications. The FGA180N30DTU operates across a wide temperature range of -55°C to 150°C. Packaged in a TO-3P through-hole configuration, this IGBT is commonly utilized in industrial power supplies, motor control, and high-frequency switching applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 21 ns |
| Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 40A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 185 nC |
| Current - Collector (Ic) (Max) | 180 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 450 A |
| Power - Max | 480 W |
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