FGA120N30DTU
IGBT, 120A, 300V, N-CHANNELManufacturer: Fairchild Semiconductor
Categories: Single IGBTs
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Fairchild Semiconductor FGA120N30DTU, an N-channel Insulated Gate Bipolar Transistor (IGBT), offers robust performance with a 300V collector-emitter breakdown voltage and a continuous collector current rating of 120A. This through-hole component, packaged in a TO-3P, is designed for applications requiring high power handling, dissipating up to 290W. Key electrical parameters include a typical gate charge of 120 nC and a low on-state voltage (Vce(on)) of 1.4V at 15V gate-emitter voltage and 25A collector current. Its operating temperature range spans from -55°C to 150°C (TJ), ensuring reliability in demanding environments. The FGA120N30DTU is suitable for power switching and motor control applications across industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Input Type | Standard |
| Reverse Recovery Time (trr) | 21 ns |
| Vce(on) (Max) @ Vge, Ic | 1.4V @ 15V, 25A |
| Supplier Device Package | TO-3P |
| IGBT Type | - |
| Td (on/off) @ 25°C | - |
| Switching Energy | - |
| Test Condition | - |
| Gate Charge | 120 nC |
| Current - Collector (Ic) (Max) | 120 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Current - Collector Pulsed (Icm) | 300 A |
| Power - Max | 290 W |
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