SSR1N60BTM-WS
MOSFET N-CH 600V 900MA DPAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor SSR1N60BTM-WS is a 600V N-Channel Power MOSFET in a TO-252 (DPAK) package. This device offers a continuous drain current of 900mA at 25°C (Tc) and a maximum power dissipation of 28W at 25°C (Tc). Key electrical characteristics include a Vgs(th) of 4V at 250µA, a gate charge (Qg) of 7.7 nC at 10V, and input capacitance (Ciss) of 215 pF at 25V. The on-resistance (Rds On) is a maximum of 12 Ohm at 450mA and 10V. Operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power supply units, lighting, and motor control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 900mA (Tc) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 450mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 215 pF @ 25 V |
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