SSP45N20A
35A, 200V, 0.065OHM, N-CHANNEL MManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
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Fairchild Semiconductor SSP45N20A is a high-performance N-channel Power MOSFET designed for demanding applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 35A at 25°C, with a maximum power dissipation of 175W (Tc). The low on-resistance (Rds On) of 65mOhm is achieved at 17.5A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 152 nC at 10V and input capacitance (Ciss) up to 3940 pF at 25V. This MOSFET utilizes Metal Oxide technology and is housed in a TO-220-3 through-hole package, suitable for various industrial power conversion and management systems. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 17.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 175W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-220-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 152 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3940 pF @ 25 V |
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