SI4410DY
MOSFET N-CH 30V 10A 8SOICManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor's SI4410DY is an N-Channel PowerTrench® MOSFET designed for efficient power switching applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C. Optimized for performance, it offers a low on-resistance (Rds On) of 13.5mOhm at 10A and 10V Vgs. Key parameters include a gate charge (Qg) of 60 nC maximum at 10V and input capacitance (Ciss) of 1350 pF maximum at 15V. The MOSFET operates over a wide temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2.5W (Ta). Packaged in a standard 8-SOIC (0.154", 3.90mm Width) for surface mounting, the SI4410DY is suitable for use in industrial and automotive sectors.
Additional Information
Series: PowerTrench®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1350 pF @ 15 V |
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