SFW9530TM
MOSFET P-CH 100V 10.5A D2PAKManufacturer: Fairchild Semiconductor
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Fairchild Semiconductor SFW9530TM is a P-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 10.5A at 25°C (Tc). It offers a low on-resistance (Rds On) of 300mOhm maximum at 5.3A and 10V gate drive voltage. The device is housed in a TO-263-3, D2PAK surface-mount package, enabling efficient thermal management with a power dissipation of 66W (Tc). Key electrical characteristics include a gate charge (Qg) of 38nC maximum at 10V and input capacitance (Ciss) of 1035pF maximum at 25V. The SFW9530TM operates across a wide temperature range from -55°C to 175°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and automotive electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 300mOhm @ 5.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.8W (Ta), 66W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-263 (D2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1035 pF @ 25 V |